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Journal of the Physical Society of Japan

Volumn 66, Issue 8, 1997, Pages 2228-2231

High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures

(6) Hayden, Robin K a Miura, Noboru a Eaves, Laurence b Henini, Mohamed b Itskevich, Igor E c Hill, Geoff d

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF NOTTINGHAM (United Kingdom)

c INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

d UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

impurity states; resonant tunnelling; single barrier diode

Indexed keywords

EID: 21944442911 PISSN: 00319015 EISSN: 13474073 Source Type: Journal
DOI: 10.1143/JPSJ.66.2228 Document Type: Article

Times cited : (4)

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