Γ-X tunnelling in GaAs/AlAs/GaAs heterostructure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 A, 1998, Pages 3245-3247

  Khanin, Yurii ^a   Vdovin, Evgenii ^a   Novoselov, Konstantin ^a   Dubrovskii, Yurii ^a   Omling, Pär ^b   Carlsson, Sven Bertil ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Resonant tunnelling; Si impurity state; Single barrier structure; Zero dimensional state; X transition

Indexed keywords

EID: 0001144264     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3245     Document Type: Article

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