Role of the X minimum in transport through AlAs single-barrier structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 16, 1998, Pages 10619-10628

  Finley, J ^a   Teissier, R ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Laboratoire de Microstructures et Microélectronique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000480205     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.10619     Document Type: Article

References (27)

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25. Since (Formula presented) is only weakly energy dependent for (Formula presented)—see W. Fawcett, A. D. Boardman, and S. Swain, J. Phys. Chem. Solids 31, 1963 (1970).
26. For the 8-nm barrier sample, we calculate that the energy separation between (Formula presented) and (Formula presented) is 47-52 meV for the bias range over which excited state emission is observed (1780-1850 meV). This is very close to the Γ-point LO phonon energy in AlAs enabling intersubband scattering to be mediated by zone center LO phonon emission. Such intersubband scattering by small wave-vector phonons is expected to be very fast, proceeding over typical time scales of several hundred femtoseconds [R. Ferreira and G. Bastard, Phys. Rev. B 40, 1074 (1989)];
27. By contrast, (Formula presented) inequivalent intervalley scattering requires the participation of large-wave-vector acoustic and optical phonons and is expected to take place over time scales longer than a picosecond [S. Zollner, S. Gopalan, and M. Cardona, J. Appl. Phys. 68, 1682 (1990)]. Thus, electrons transferring into (Formula presented) states are expected to remain in the longitudinal X states until (Formula presented) transfer occurs.