Interaction of Co with SiGe epilayer grown on Si(100)

Surface Science

Volumn 421, Issue 1-2, 1999, Pages 100-105

  Prabhakaran, K ^a   Sumitomo, K ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Cobalt; Germanium; Metal semiconductor interfaces; Silicon; Silicon oxide; Surface chemical reaction; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; COBALT; COBALT COMPOUNDS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICA; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

COBALT SILICIDE; MEDIUM ENERGY ION SCATTERING SPECTROSCOPY (MEIS); SILIDON GERMANIUM;

SILICON WAFERS;

EID: 0033521817     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00826-7     Document Type: Article

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