A high temperature vacuum annealing method for forming ohmic contacts to GaN and SiC

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 122-127

  Papanicolaou, N A ^a   Edwards, A ^b   Rao, M V ^b   Wickenden, A E ^a   Koleske, D D ^a   Henry, R L ^a   Anderson, W T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b George Mason University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLIZING; OHMIC CONTACTS; SILICON CARBIDE; SILICON COMPOUNDS; VACUUM FURNACES;

ANNEALED SAMPLES; CONTACT RESISTIVITIES; HIGH-TEMPERATURE ANNEALING; HIGH-TEMPERATURE VACUUM ANNEALING; IN-VACUUM; PROFILE ANALYSIS; RESISTIVELY HEATED; VACUUM-ANNEALING;

ANNEALING;

EID: 85009883714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676772     Document Type: Conference Paper

References (10)

1. D. W. Jenkins and J. D. Dow, Phys. Rev. B39, (1989), p. 3317.
2. M. A. Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Appl. Phys. Lett. 62 (15), (1993), p. 1786.
3. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62, No. 22, (1993) p. 2859.
4. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morcog, Appl. Phys. Lett. 64 (8), (1994), p. 103.
5. Z. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, K. Dduxtad, and E. E. Haller, J. Electron. Muter. 25, No. 11, (1996), p. 1703
6. D. B. Ingerly, and Y. A. Chang, Appl. Phys. Lett., 70, No. 1, (1997), p. 108
7. A. I. Ping, M. A. Khan, and I. Adesida, J Electron. Mater. 25, No. 5, (1996), p. 819
8. J. Burm, K. Chu, W. A. Davis, W. J. Schaff, and T. J. Eustis, Appl. Phys. Lett. 70 (4), (1997), p. 464
9. G. K. Reeves and H. B. Harrison, ZEEE Electron Dev. Lett. EDL-3, (1982), p. 111.
10. B. P. Luther, S. e. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Wang, Appl. Phys. Lett, 70, No. 1. (1997), p. 57.