SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium-Proceedings

Volumn 622, Issue , 2000, Pages T831-T837

Stable Ti/TaSi2/Pt ohmic contacts on N-type 6H-SiC epilayer at 600°C in air

(5) Okojie, Robert S a Spry, David b Krotine, Jeff b Salupo, Carl b Wheeler, Donald R a

a NASA GLENN RESEARCH CENTER (United States)

b Akima Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); METALLIZING; OHMIC CONTACTS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

CONTACT RESISTANCE;

SILICON CARBIDE;

EID: 0034429833 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-622-t8.3.1 Document Type: Article

Times cited : (15)

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