Diffusion barriers on titanium-based ohmic contact structures on SiC

1998 High-Temperature Electronic Materials, Devices and Sensors Conference

Volumn 1998-February, Issue , 1998, Pages 159-164

  Wenzel, R ^a   Goesmann, F ^a   Schmid Fetzer, R ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; ELECTRIC CONTACTORS; HIGH TEMPERATURE APPLICATIONS; OHMIC CONTACTS; SILICON CARBIDE; TITANIUM; TITANIUM CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

CONTACT LAYERS; CONTACT MATERIAL; CONTACT STRUCTURE; CONTACT SYSTEMS; LOW RESISTANCE; OHMIC BEHAVIOUR; THERMALLY STABLE OHMIC CONTACTS; TITANIUM-BASED;

SEMICONDUCTOR DEVICES;

EID: 85026193585     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HTEMDS.1998.730692     Document Type: Conference Paper

References (6)

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2. J. Klingbeil, R. Schmid-Fetzer. TerQuat: Approximate Prediction of Ternary and Quaternary Systems Comprising Stoichiometric Phases: J. Phase Equilibria, 13, 522-531, (1992)
3. H.H. Berger: Models for contacts to planar devices. Solid-State Electronics, 15, 145-158, (1972)
4. F. Goesmann, R. Schmid-Fetzer. Stability of W as electrical contact on 6H-SiC: phase relations and interface reactions in the ternary system W-Si-C: Mat.Sci.EngB, 34, 224-231, (1995)
5. R.O. Suzuki, K. Osamura. SAXS study on crystallization of an amorphous Pd76Au6Si18 alloy: J. Mater. Sci., 19,1476-1485, (1984)
6. R. Wenzel, F. Goesmann, R. Schmid-Fetzer. Interface reactions between titanium silico-carbides and Au, Al or Pd at 600'C: Mat.Sci.EngB, accepted