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Volumn 37, Issue 10, 2002, Pages 1941-1949
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Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2
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Author keywords
[No Author keywords available]
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Indexed keywords
COPPER;
DIFFUSION;
ELECTRIC RESISTANCE MEASUREMENT;
GRAIN SIZE AND SHAPE;
IONIZATION;
PLASMAS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SILICON COMPOUNDS;
SPUTTER DEPOSITION;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
DIFFUSION BARRIER;
IONIZED METAL PLASMA SPUTTERING;
TANTALUM;
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EID: 0037094401
PISSN: 00222461
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1015230727381 Document Type: Article |
Times cited : (13)
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References (32)
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