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Volumn 41, Issue 1 A/B, 2002, Pages
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A feasibility study of 50 nm resolution with low energy electron beam proximity projection lithography
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Author keywords
50 nm; Interference; LEEPL; Lithography; Resolution
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Indexed keywords
CHEMICAL ANALYSIS;
DIFFRACTION GRATINGS;
ELECTRON SCATTERING;
ELECTROPLATING;
ENERGY GAP;
LOW ENERGY ELECTRON DIFFRACTION;
NATURAL FREQUENCIES;
OPTICAL RESOLVING POWER;
POLYMETHYL METHACRYLATES;
PROJECTION SYSTEMS;
REACTIVE ION ETCHING;
SCANNING ELECTRON MICROSCOPY;
SILICON WAFERS;
SUBSTRATES;
LOW ENERGY ELECTRON BEAM PROXIMITY PROJECTION LITHOGRAPHY (LEEPL);
ELECTRON BEAM LITHOGRAPHY;
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EID: 0037082083
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.l87 Document Type: Article |
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Times cited : (4)
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References (5)
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