Low-energy E-beam proximity lithography (LEEPL): Is the simplest the best?

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7046-7051

  Utsumi, Takao ^a,b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b Nanolith Incorporated   (United States)

Author keywords

High accuracy; High throughput; Low energy; Low power; NGL; Proximity e beam lithography

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTRON OPTICS; HEAT CONDUCTION; INTEGRATED CIRCUIT MANUFACTURE; MASKS; PHOTORESISTS; X RAY LITHOGRAPHY;

LOW-ENERGY ELECTRON-BEAM LITHOGRAPHY (LEEPL);

ELECTRON BEAM LITHOGRAPHY;

EID: 0033348295     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7046     Document Type: Article

References (9)

1. G. E. Moore: Proc. SPIE 2437 (1995) 2.
2. H. Bohlen, U. Behringer, J. Keyser, P. Nehmiz, W. Zapka and W. Kulcke: Solid State Technol. (1984) 210.
3. P. Nehmiz, U. Behringer, H. Bohlen and M. Kalmeyer: J. Vac. Sci. & Technol. 11 (1983) 1023.
4. U. Behringer and H. Engelke: J. Vac. Sci. & Technol. 11 (1983) 2400.
5. U. Behringer and P. Vettiger: J. Vac. Sci. & Technol. (1986) 94.
6. U. Behringer: private communication.
7. U.S. Patent No. 5831272, Nov. 3, 1998, Japanese Patent No. 2951947, July 9, 1999.
8. H. I. Smith, M. L. Schattenburg, S. D. Hector, J. Ferrera, E. E. Moon, I. Y. Yang and M. Burkkhardt: Microelectron. Eng. 32 (1996) 143.
9. J. N. Randall and R. Sivasankar: J. Vac. Sci. & Technol. 5 (1987) 5.