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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 3, 2002, Pages 354031-3540310

Gate voltage dependence of a single-electron transistor using the shuttle mechanism

(1) Nishiguchi, Norihiko a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRODE; ELECTRON TRANSPORT; MATHEMATICAL ANALYSIS; MODEL; NANOPARTICLE; VIBRATION;

EID: 0037080974 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (44)

References (19)

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