Coulomb-blockade dominated transport in patterned gold-cluster structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7796-7800

  Wybourne, Martin K ^a,b   Clarke, Laura ^a   Yan, Mingdi ^a   Cai, Sui X ^a   Brown, Leif O ^a   Hutchison, James ^a   Keana, John F W ^a  

^a UNIVERSITY OF OREGON   (United States)

^b Dartmouth College   (United States)

Author keywords

Coherent electron tunneling; Coulomb blockade; Disordered arrays; Electron beam lithography; Ligand stabilized metal cluster

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GOLD COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

COULOMB BLOCKADE PRINCIPLE;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031376673     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7796     Document Type: Article

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