Fabrication of GaAs symmetric pyramidal mesas prepared by wet-chemical etching using AlAs interlayer

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 878-880

  Kicin, S ^a   Cambel, V ^a   Kuliffayova M ^a   Gregusova D ^a   Kovacova E ^a   Novak J ^a   Kostic I ^b   Forster A ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF INFORMATICS   (Slovakia)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CLEAVAGE PLANE; CROSS SECTIONAL PROFILES; EGYPTIANS; ETCHED STRUCTURES; GAAS; LATERAL ETCHING; PYRAMIDAL STRUCTURES; WET-CHEMICAL ETCHING;

SEMICONDUCTING GALLIUM; WET ETCHING;

GALLIUM ARSENIDE;

EID: 0037080722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421626     Document Type: Article

References (9)

1. J. L. Leclercq, R. P. Ribas, J. M. Karam, and P. Viktorovitch, Microelectron. J. 29, 613 (1998).
2. K. Hjort, J. Söderquist, and J.-A. Schweitz, J. Micromech. Microeng. 4, 1 (1999).
3. K. Yamaguchi and S. Tada, J. Electrochem. Soc. 143, 2616 (1996).
4. D. Scheiner, Y. Hanein, and M. Heiblum, Semicond. Sci. Technol. 12, 1046 (1997).
5. R. Klockenbrink, E. Peiner, H.-H. Wehmann, and A. Schlachetzki, J. Electrochem. Soc. 141, 1594 (1994).
6. P. Eliáš, S. Hasenohrl, V. Cambel, and I. Kostič, Thin Solid Films 380, 105 (2000).
7. S. Kicin, J. Novák, M. Kucera, S. Hasenöhrl, P. Eliáš, I. Vávra, and P. Hudek, Mater. Sci. Eng., B 65, 106 (1999).
8. E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, Appl. Phys. Lett. 51, 2222 (1987).
9. Y. Mori and N. Watanabe, J. Electrochem. Soc. 125, 1510 (1978).