Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 180-183

  Nikiforov, A I ^a   Cherepanov, V A ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Germanium; Molecular beam epitaxy; Quantum dots; Reflection high energy electron diffraction; Silicon

Indexed keywords

FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

ELASTIC DEFORMATION;

SEMICONDUCTING FILMS;

EID: 0037074873     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00840-6     Document Type: Conference Paper

References (7)