Growth of highly strained germanium dots on Si(001) covered by a silicon nitride layer

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3843-3845

  Derivaz, M ^a   Noe P ^a   Dianoux, R ^a   Barski, A ^a   Schulli T ^b   Metzger, T H ^b  

^a CEA GRENOBLE   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SILICON NITRIDE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LATTICE RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037065015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519354     Document Type: Article

References (6)

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