Silicon planar MESA diodes as radiation detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 588-595

  Houdayer, A ^a   Lebel, C ^a   Leroy, C ^a   Roy, P ^a   Linhart, V ^b   Pospisil S ^b   Sopko, B ^b   Courtemanche, S ^a   Stafford, M C ^a  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

10 MeV proton irradiation; Planar MESA; Silicon detectors

Indexed keywords

ELECTRIC POTENTIAL; PARTICLE DETECTORS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR DIODES;

SILICON DIODES; SILICON STANDARD PLANAR (SP) DETECTORS;

SILICON SENSORS;

EID: 0037059409     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01646-1     Document Type: Conference Paper

References (12)

1. Production of FZ silicon wafers by Polovodiče/Prague and MESA detector production
2. Study of the characteristics of silicon MESA radiation detectors
3. Study of charge transport in non-irradiated and irradiated silicon detectors
4. Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons