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Volumn 190, Issue 1-4, 2002, Pages 80-87
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Observation of triangular terraces and triangular craters of CaF 2 film on Si(1 1 1) substrate
a
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Author keywords
AFM; CaF 2 Si(1 1 1); Electron stimulated desorption; Growth mode; Morphology; RHEED intensity oscillation
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CALCIUM COMPOUNDS;
DESORPTION;
EPITAXIAL GROWTH;
FILM GROWTH;
HIGH TEMPERATURE EFFECTS;
LATTICE CONSTANTS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING SILICON;
SUBSTRATES;
THIN FILMS;
ELECTRON-STIMULATED DESORPTION (ESD);
FILM SURFACES;
SURFACE STRUCTURE;
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EID: 0037042080
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(01)00843-1 Document Type: Conference Paper |
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Times cited : (5)
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References (16)
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