Creation and consumption of free Si atoms at the growth front of a CaF monolayer on

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 3, 1998, Pages 1855-1859

  Nakayama, T ^a   Aono, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000192341     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.1855     Document Type: Article

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