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Volumn 35, Issue 7, 2002, Pages 631-636

Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/n-In 0.83Ga0.17As0.82 Sb0.18 single heterojunction

(4) Moiseev, K D a Krier, A b Mikhailova, M P a Yakovlev, Yu P a

a IOFFE INSTITUTE (Russian Federation)

b LANCASTER UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

AUGER RECOMBINATION; DOUBLE CRYSTAL X-RAY DIFFRACTION; EPITAXIAL STRUCTURES; EPITAXIAL WAFER; INTERFACE INDUCE EMISSION; INTERFACE INDUCED ELECTROLUMINESCENCE; INTERFACE TRANSITIONS; LATTICE MATCH; NARROW GAP; QUARTERNARY EPITAXIAL LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037035262 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/35/7/311 Document Type: Article

Times cited : (6)

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