Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures

Journal of Applied Physics

Volumn 90, Issue 8, 2001, Pages 3988-3992

  Moiseev, K D ^a   Krier, A ^a   Yakovlev, Yu P ^a,b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886299     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402968     Document Type: Article

References (12)

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