Interface electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 673-677

  Mikhailova, M P ^a   Zegrya, G G ^a   Moiseev, K D ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ELECTRONS; LIGHT EMISSION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DRIVE CURRENT; INTENSIVE SPONTANEOUS EMISSION; INTERFACE ELECTROLUMINESCENCE; MID INFRARED LASERS; TUNABLE DIODE LASER SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0029711020     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00384-3     Document Type: Article

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