High tunability and superluminescence in InAs mid-infrared light emitting diodes

Journal of Physics D: Applied Physics

Volumn 35, Issue 3, 2002, Pages 196-198

  Sherstnev, V V ^a   Krier, A ^a   Hill, G ^b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TUNING;

SUPERLUMINESCENCE;

LIGHT EMITTING DIODES;

EID: 0037034169     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/3/306     Document Type: Article

References (12)

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4. Long-wavelength light-emitting diodes, based on InAsSbP/InAs heterostructures (λ = 3.0-4.8 μm) at 300 K with wide-gap window
5. Powerful mid-infrared emitting diodes for pollution monitoring
6. Powerful interface light emitting diodes for methane gas detection
7. Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering