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Volumn 62, Issue 2, 2000, Pages 92-96

Temperature effect of a-Si:H pH-ISFET

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ION SENSITIVE FIELD EFFECT TRANSISTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS;

EID: 0033908528     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00369-X     Document Type: Article
Times cited : (32)

References (12)
  • 1
    • 0014698380 scopus 로고
    • Development of an ion-sensitive solid-state device for neurophysiological measurements
    • Bergveld P. Development of an ion-sensitive solid-state device for neurophysiological measurements. IEEE Trans. Biomed. Eng. BME-17:1970;70-71.
    • (1970) IEEE Trans. Biomed. Eng. , vol.17 , pp. 70-71
    • Bergveld, P.1
  • 2
    • 0016125184 scopus 로고
    • An integrated field effect electrode for biopotential recording
    • Mastsuo T., Wise K.D. An integrated field effect electrode for biopotential recording. IEEE Trans. Biomed. Eng. BME-21:1947;485-487.
    • (1947) IEEE Trans. Biomed. Eng. , vol.21 , pp. 485-487
    • Mastsuo, T.1    Wise, K.D.2
  • 4
    • 0027663107 scopus 로고
    • Effect of electrolyte exposure on silicon dioxide in electrolyte-oxide-semiconductor structures
    • Topkar A., Lal R. Effect of electrolyte exposure on silicon dioxide in electrolyte-oxide-semiconductor structures. Thin Solid Films. 232:1993;265-270.
    • (1993) Thin Solid Films , vol.232 , pp. 265-270
    • Topkar, A.1    Lal, R.2
  • 5
    • 0024702117 scopus 로고
    • Ion-sensitive field-effect transistor with silicon nitride gate for pH sensing
    • Liu B.D., Su Y.K., Chen S.C. Ion-sensitive field-effect transistor with silicon nitride gate for pH sensing. Int. J. Electron. 1:1989;59-63.
    • (1989) Int. J. Electron. , vol.1 , pp. 59-63
    • Liu, B.D.1    Su, Y.K.2    Chen, S.C.3
  • 7
    • 36749120083 scopus 로고
    • Schottky-barrier characteristics of metal-amorphous-silicon diodes
    • Wronski C.R., Carlson D.E., Daniel R.E. Schottky-barrier characteristics of metal-amorphous-silicon diodes. Appl. Phys. Lett. 29:1976;602-605.
    • (1976) Appl. Phys. Lett. , vol.29 , pp. 602-605
    • Wronski, C.R.1    Carlson, D.E.2    Daniel, R.E.3
  • 9
    • 0018442027 scopus 로고
    • Amorphous-silicon field-effect device and possible application
    • LeComber P.G., Spear W.E., Ghaith A. Amorphous-silicon field-effect device and possible application. J. Electron. Lett. 15:1979;179-181.
    • (1979) J. Electron. Lett. , vol.15 , pp. 179-181
    • Lecomber, P.G.1    Spear, W.E.2    Ghaith, A.3
  • 10
    • 0023363347 scopus 로고
    • Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-effect transistor (EISFET's)
    • Barabash P.R., Cobbold R.S.C., Wlodarski W.B. Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-effect transistor (EISFET's). IEEE Trans. Electron Devices. ED-34:1987;1271-1282.
    • (1987) IEEE Trans. Electron Devices , vol.34 , pp. 1271-1282
    • Barabash, P.R.1    Cobbold, R.S.C.2    Wlodarski, W.B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.