Growth kinetics of three Mo-silicide layers formed by chemical vapor deposition of Si on Mo substrate

Surface and Coatings Technology

Volumn 155, Issue 1, 2002, Pages 85-95

  Yoon, Jin Kook ^a   Byun, Ji Young ^a   Kim, Gyeung Ho ^a   Kim, Jae Soo ^a   Choi, Chong Sool ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

CVD; Diffusion; Growth kinetics; Mo silicides

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DIFFUSION; GRAIN BOUNDARIES; GROWTH KINETICS; NUCLEATION; SILICON; THERMAL EFFECTS;

PARABOLIC RATE LAWS;

MOLYBDENUM;

COATING; CORROSION PREVENTION; DIFFUSION; HIGH TEMPERATURE APPLICATION; MOLYBDENUM; VAPOR DEPOSITION;

EID: 0037014245     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00015-4     Document Type: Article

References (31)