Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Journal of Electronic Materials

Volumn 26, Issue 2, 1997, Pages

  Park, Byung Lyul ^a   Ko, Dae Hong ^a,b   Kim, Young Sun ^a   Ha, Jung Min ^a   Park, Young Wook ^a   Lee, Sang In ^a   Lee, Hyeon Deok ^a   Lee, Myoung Bum ^a   Chung, U In ^a   Koh, Young Bum ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Diffusion barrier; Plasma enhanced chemical vapor desposition (PECVD); Tungsten nitride; Ultra large scale integration (ULSI) DRAM

Indexed keywords

EID: 0042646858     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0096-6     Document Type: Article

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