Control of surface reaction on highly accurate low-k methylsilsesquioxane etching process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 12 A, 2002, Pages

  Morikawa, Yasuhiro ^a   Hayashi, Toshio ^a   Uchida, Taijiro ^a  

^a ULVAC INC   (Japan)

Author keywords

Low dielectric constant (low k); Microtrench; MSQ; N2 addition; NLD etching; Surface reaction

Indexed keywords

ADDITION REACTIONS; COMPOSITION; MIXING; PERMITTIVITY; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SURFACE REACTIONS;

MAGNETICALLY NEUTRAL LOOP DISCHARGED PLASMA; METHYLSILSESQUIOXANE FILM; MICROTRENCH;

DIELECTRIC FILMS;

EID: 0036978644     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1406     Document Type: Letter

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