Growth and orientation of GaN epilayers on NdGaO3 by hydride vapor phase epitaxy

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1999, Pages 33-36

  Wakahara, Akihiro ^a   Nishida, Teruaki ^a   Kawano, Kenji ^a   Yoshida, Akira ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; HYDRIDES; LATTICE CONSTANTS; LIGHT EMITTING DIODES; NEODYMIUM COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; LATTICE MISMATCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032598550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)