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Volumn , Issue , 2002, Pages 90-93

Investigation of barrier layers on ceramics for silicon thin film solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DEPOSITION; DIFFUSION IN SOLIDS; HIGH TEMPERATURE OPERATIONS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILMS;

EID: 0036956995     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (14)
  • 1
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    • Sub-5 μm thin film crystalline silicon solar cell on alumina ceramic substrate
    • K. Ishii, H. Nishikawa, T. Takahashi, Y. Hayashi; "Sub-5 μm thin film crystalline silicon solar cell on alumina ceramic substrate", Jpn. J. Appl. Phys. 32 (1993) pp. L770-L773.
    • (1993) Jpn. J. Appl. Phys. , vol.32
    • Ishii, K.1    Nishikawa, H.2    Takahashi, T.3    Hayashi, Y.4
  • 6
    • 0032187668 scopus 로고    scopus 로고
    • Crystalline silicon thin films: A promising approach for photovoltaics?
    • A. Slaoui, J. Poortsmans, M. Caymax, "Crystalline Silicon Thin Films: A promising Approach for Photovoltaics?", J. Mat. Res., 13, 1998, pp. 763-770.
    • (1998) J. Mat. Res. , vol.13 , pp. 763-770
    • Slaoui, A.1    Poortmans, J.2    Caymax, M.3
  • 7
    • 0019008113 scopus 로고
    • Impurities in silicon solar cells
    • J. R. Davis et al., "Impurities in Silicon Solar Cells", IEEE Trans. on Electron. Dev. 27, 1980, p.677-685.
    • (1980) IEEE Trans. on Electron. Dev. , vol.27 , pp. 677-685
    • Davis, J.R.1
  • 8
    • 0016081559 scopus 로고
    • Deep level transient spectroscopy
    • D.V. Lang, "Deep Level Transient Spectroscopy", J. Appl. Phys. 45, 1974, 3023-3030.
    • (1974) J. Appl. Phys. , vol.45 , pp. 3023-3030
    • Lang, D.V.1
  • 9
    • 0012518246 scopus 로고    scopus 로고
    • Multicrystalline silicon layers for photovoltaic applications grown by a modified CVD process
    • H. v. Campe et al.; "Multicrystalline silicon layers for photovoltaic applications grown by a modified CVD process", 11th EPVSEC, pp. 1066-1069.
    • 11th EPVSEC , pp. 1066-1069
    • Campe, H.V.1
  • 10
    • 0041361188 scopus 로고    scopus 로고
    • High temperature diffusion of iron in PECVD-SiO2 barrier layers for crystalline silicon thin-film solar cells
    • S. Reber, J. Aschaber, A. Hurrle, "High temperature diffusion of iron in PECVD-SiO2 barrier layers for crystalline silicon thin-film solar cells", 2nd WCPVSEC, 1998, pp. 1789-1801.
    • 2nd WCPVSEC, 1998 , pp. 1789-1801
    • Reber, S.1    Aschaber, J.2    Hurrle, A.3
  • 12
    • 0003269304 scopus 로고
    • Metal impurities in silicon-device fabrication
    • K. Graff, "Metal Impurities in Silicon-Device Fabrication", Springer Series in Material Science V. 24, 1995.
    • (1995) Springer Series in Material Science , vol.24
    • Graff, K.1
  • 13
    • 0001363416 scopus 로고
    • A fast, preparation-free method to detect iron in silicon
    • G. Zoth and W. Bergolzh, "A fast, preparation-free method to detect iron in silicon", J. Appl. Phys. 67(11), 1990, pp. 6764-6770.
    • (1990) J. Appl. Phys. , vol.67 , Issue.11 , pp. 6764-6770
    • Zoth, G.1    Bergolzh, W.2
  • 14
    • 0033343703 scopus 로고    scopus 로고
    • Diffusion of iron in silicon dioxide
    • D.A. Ramappa and W.B. Henley, "Diffusion of Iron in Silicon Dioxide", J. Electrochem. Soc. 146, 1999, pp. 3773-3777.
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 3773-3777
    • Ramappa, D.A.1    Henley, W.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.