Wide-gap thin film Si n-i-p solar cells deposited by hot-wire CVD

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1222-1225

  Wang, Qi ^a   Iwaniczko, Eugene ^a   Yang, Jeffrey ^b   Lord, Kenneth ^b   Guha, Subhendu ^b   Wang, Keda ^c   Han, Daxing ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b United Solar Systems Corp   (United States)

^c The University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY GAP; HYDROGEN; INTERFACES (MATERIALS); PHASE TRANSITIONS; PLASMA APPLICATIONS; SUBSTRATES; TEMPERATURE; THIN FILMS;

HIGH VOLTAGE WIDE BANDGAP THIN FILM; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGEN DILUTION; OPEN CIRCUIT VOLTAGE; OPTICAL BAND GAP;

SILICON SOLAR CELLS;

EID: 0036953694     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

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