Influence of electrons from the filament on the material properties of hydrogenated amorphous silicon grown by the hot-wire chemical vapor deposition technique

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 927-932

  Nelson, Brent P ^a   Wang, Qi ^a   Iwaniczko, Eugene ^a   Mahan, A H ^a   Crandall, R S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC INSULATING MATERIALS; SUBSTRATES; THERMAL EFFECTS;

HOT-WIRE CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0032630224     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)