Advanced defect characterization by combining temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS)

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 190-193

  Rein, S ^a   Lichtner, P ^a   Warta, W ^a   Glunz, S W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON ENERGY LEVELS; IMPURITIES; SILICON SOLAR CELLS; SILICON WAFERS; TEMPERATURE;

INJECTION DEPENDENT LIFETIME SPECTROSCOPY; MICROWAVE DETECTED PHOTOCONDUCTANCE DECAY TECHNIQUE; QUASI-STEADY STATE PHOTOCONDUCTANCE TECHNIQUE; TEMPERATURE DEPENDENT LIFETIME SPECTROSCOPY;

SPECTROSCOPY;

EID: 0036948560     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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