Growth of high quality amorphous silicon-germanium films using low pressure remote electron-cyclotron-resonance discharge

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 563-566

  Kaushal, Sanjeev ^a   Dalal, Vikram ^a   Xu, Jun ^a  

^a Iowa State University of Science and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS SILICON; BAND STRUCTURE; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; FILM GROWTH; GLOW DISCHARGES; HELIUM; ION BOMBARDMENT; PHOTOSENSITIVITY; PLASMAS; SILICON ALLOYS;

AMORPHOUS SILICON GERMANIUM FILMS; BAND GAP; GROWTH CHEMISTRY; LOW PRESSURE REMOTE ELECTRON CYCLOTRON RESONANCE DISCHARGE; SUB GAP DEFECT DENSITIES; URBACH ENERGIES;

AMORPHOUS FILMS;

EID: 0030563414     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00764-4     Document Type: Article

References (3)

1. F. Zhong, J.D. Cohen, J. Yang and S. Guha, in: Proc. Mater. Res. Soc. 336 (1994) 493.
2. G. Baldwin, V. Dalal and K. Han, in: Proc. of 23rd. IEEE Photovolt. Conf. (IEEE, New York, NY, 1993) p. 1037.
3. S. Lee, S. Kumar and C. Wronski, J. Non-Cryst. Solids 114 (1989) 316.