Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

Journal of Electronic Materials

Volumn 31, Issue 12, 2002, Pages 1353-1356

  Virojanadara, Chavi ^a   Glans, P A ^a   Balasubramanian, T ^b   Johansson, L I ^a   Macak, E B ^a   Wahab, Q ^a   Madsen, L D ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Au SiC; Capacitance voltage; Contacts; Current voltage; Photoemission; Schottky barriers; Silicon carbide; Surface treatment

Indexed keywords

ANNEALING; DEPOSITION; EVAPORATION; FERMI LEVEL; GOLD; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; PHOTONS; SURFACE TREATMENT; SYNCHROTRON RADIATION;

SCHOTTKY BARRIER HEIGHT (SBH);

SILICON CARBIDE;

EID: 0036918159     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0121-8     Document Type: Article

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