Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors

Journal of Applied Physics

Volumn 90, Issue 11, 2001, Pages 5666-5669

  Lin, S D ^a   Lee, C P ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035575786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415060     Document Type: Article

References (14)

1. C. A. Mead, Solid-State Electron. 9, 1023 (1966).
2. S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, and D. M. Collins, J. Appl. Phys. 61, 5159 (1987).
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
4. R. W. Grant and J. R. Waldrop, J. Vac. Sci. Technol. B 5, 1015 (1987).
5. K. Hirose and E. Foxman, Appl. Phys. Lett. 54, 2347 (1989).
6. K. Hirose, H. Tsuda, and T. Mizutani, Appl. Surf. Sci. 41/42, 174 (1989).
7. S. Fujieda, J. Appl. Phys. 74, 7357 (1993).
8. J. M. Shannon, Solid-State Electron. 19, 537 (1975).
9. W. E. Stanchina, M. D. Clark, K. V. Vaidyanathan, R. A. Jullens, and C. R. Crowell, J. Electrochem. Soc. 134, 967 (1987).
10. G. P. Schwartz, G. J. Gualtieri, and W. A. Bonner, J. Electrochem. Soc. 133, 1021 (1986).
11. P. Korodoš, M. Marso, R. Meyer, and H. Luth, J. Appl. Phys. 72, 2347 (1992).
12. L. P. Sadwick, C. W. Kim, K. L. Tan, and D. C. Streit, IEEE Electron Device Lett. j12, 626 (1991).
13. S. M. Sze, D. J. Coleman, Jr., and A. Loya, Solid-State Electron. 14, 1209 (1971).
14. J. B. D. Soole and H. Schumacher, IEEE J. Quantum Electron. 27, 737 (1991).