X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum

Journal of Crystal Growth

Volumn 213, Issue 3-4, 2000, Pages 221-228

  Oyama, Yutaka ^a,b,c   Nishizawa, Jun Ichi ^b,c   Seo, Kohichi ^a   Suto, Ken ^a,b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c Telecommunications Advancement Organization of Japan   (Japan)

Author keywords

Epitaxy; GaAs; Impurity doping; MLE; Strain; X ray diffraction

Indexed keywords

EID: 0011183291     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00386-9     Document Type: Article

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