Site preferences of oxygen and boron atoms during dissociative reaction of HBO2 molecules onto the Si(111)-7×7 surface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1469-1472

  Kaikoh, T ^a   Miyake, K ^a   Li, Y J ^a   Morita, R ^b   Yamashita, M ^b   Shigekawa, H ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; HYDROGEN INORGANIC COMPOUNDS; MOLECULAR BEAM EPITAXY; OXYGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING BORON; STRAIN;

HYDROGEN BORATE;

SEMICONDUCTING SILICON;

EID: 0034227950     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582478     Document Type: Article

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