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Volumn 20, Issue 6, 2002, Pages 2814-2818

Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration

b RIKEN (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FERROMAGNETIC MATERIALS; INTERFACES (MATERIALS); ION BEAM ASSISTED DEPOSITION; IRRADIATION; NUCLEATION; POLARIZATION;

DOMAIN WALL NUCLEATION PROCESS; FERROMAGNETIC WIRE; MULTI ANGLE DEPOSITION; SPIN INJECTION MODEL; SPIN POLARIZED CURRENT;

NANOSTRUCTURED MATERIALS;

EID: 0036883163 PISSN: 0734211X EISSN: None Source Type: Journal
DOI: 10.1116/1.1518014 Document Type: Article

Times cited : (2)

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