Scattering mask concept for ion-beam nanolithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2705-2708

  Ruchhoeft, P ^a   Wolfe, J C ^a   Torres, J L ^a   Bass, R ^b  

^a UNIVERSITY OF HOUSTON   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ION BEAM LITHOGRAPHY; MAGNETRON SPUTTERING; NANOTECHNOLOGY; PRESSURE; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

ION BEAM PROXIMITY LITHOGRAPHY; SCATTERING MASKS;

MASKS;

EID: 0036883144     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1520568     Document Type: Article

References (10)

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