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Volumn 20, Issue 6, 2002, Pages 2496-2499
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Low energy electron microscopy/diffraction study on growth of Ge on Si(113) surface
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
ELECTRON MICROSCOPY;
LOW ENERGY ELECTRON DIFFRACTION;
MONOLAYERS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
LOW ENERGY ELECTRON MICROSCOPY;
SEMICONDUCTOR HETEROEPITAXIAL SYSTEM;
SPOT INTENSITY;
SEMICONDUCTING GERMANIUM;
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EID: 0036883111
PISSN: 0734211X
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1523374 Document Type: Article |
Times cited : (5)
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References (17)
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