Detection of single photons using a field effect transistor with a layer of quantum dots

Measurement Science and Technology

Volumn 13, Issue 11, 2002, Pages 1721-1726

  Kardynal, B E ^a   Shields, A J ^a   O'Sullivan, M P ^a,b   Beattie, N S ^a,b   Farrer, I ^b   Ritchie, D A ^b   Cooper, K ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Field effect transistor; InAs dots; Quantum communication; Single photon

Indexed keywords

FIELD EFFECT TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

SOURCE-DRAIN CURRENTS;

PHOTONS;

DETECTION METHOD; LIGHT;

EID: 0036881767     PISSN: 09570233     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-0233/13/11/308     Document Type: Article

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