Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer

Superlattices and Microstructures

Volumn 25, Issue 3, 1999, Pages 537-549

  Metzner, C ^a   Yusa, G ^a   Sakaki, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRON TUNNELING; SEMICONDUCTOR QUANTUM DOTS;

COULOMB INTERACTION;

FIELD EFFECT TRANSISTORS;

EID: 0033100903     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0228     Document Type: Article

References (16)

1. B. I. Shklovskii and A. L. Efros, Electronic properties of doped semiconductors, Springer Series in Solid-state Sciences, Vol. 45, Springer, Berlin (1984).
2. C. Metzner, S. G. Müller, T. Schmidt, and G.H. Döhler, Superlattices and Microstructures 12, 101 (1992).
3. T. Schmidt, C. Metzner, S. G. Müller, and G. H. Döhler, Phys. Rev. B47, 10633 (1993).
4. H. Sakaki, Surf. Sci. 267, 623 (1992).
5. D. Leonhard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
6. J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
7. H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kadoya, and H. Noge, Appl. Phys. Lett. 67, 3444 (1995).
8. G. Yusa and H. Sakaki, Electron. Lett. 32, 491 (1996).
9. A. L. Efros, J. Phys. C9, 2021 (1976).
10. S. D. Baranovskii, A. L. Efros, B. L. Gelmont, and B. I. Shklovskii, J. Phys. C12, 1023 (1979).
11. J. H. Davies, P. A. Lee, and T. M. Rice, Phys. Rev. B29, 4260 (1984).
12. A. Möbius, M. Richter, and B. Drittler, Phys. Rev. B45, 11568-11579 (1992).
13. H. Drexler, D. Leonhard, W. Hansen, J. P. Kotthaus, and P. M. Petroff, Phys. Rev. Lett. 73, 2252 (1994).
14. G. Medeiros-Ribeiro, D. Leonhard, and P. M. Petroff, Appl. Phys. Lett. 66, 1767 (1995).
15. C. Metzner, H. J. Beyer, and Döhler, Phys. Rev. B46, 4128 (1992).
16. J. Schönhut, C. Metzner, S. Müller, T. Schmidt, G. H. Döhler, A. Förster, and H. Lüth, Sol. State Electron. 40, 701-705 (1996).