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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 3089-3094

Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy

(10) Schneider, G a Meyer, M A b Denbeaux, G a Anderson, E a Bates, B a Pearson, A a Knochel C c Hambach, D c Stach, E A a Zschech, E b

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b IBM MICROELECTRONICS (United States)

c UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; COPPER; DIFFUSION; ELECTRON BEAM LITHOGRAPHY; GRAIN BOUNDARIES; INTERCONNECTION NETWORKS; PASSIVATION; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY MICROSCOPES;

CONDENSER ZONE PLATE; FOCUSED ION BEAM; PHOTON ENERGY; TIME-RESOLVED X-RAY MICROSCOPY;

ELECTROMIGRATION;

EID: 0036874022 PISSN: 0734211X EISSN: None Source Type: Journal
DOI: 10.1116/1.1523403 Document Type: Article

Times cited : (11)

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