Charge loss mechanisms in a stacked-gate flash EEPROM cell with an ONO inter-poly dielectric

Journal of the Korean Physical Society

Volumn 39, Issue 6, 2001, Pages 1103-1106

  Kim, Jang Han ^a   Moon, Y M ^a   Choi, Jung Bum ^a   Shin, Bong Jo ^a   Choi, Ikguen ^a   Park, Keun Hyung ^a   Yang, Sung Il ^b  

^a Chungbuk National University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035542081     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. N. R. Mielke, Proc. 21th IEEE IRPS, 106 (1983).
2. C. S. Pan, K. Wu, P. Freiberger, A. Chatterjee and G. Sery, IEEE Trans. Electron Dev. ED-37, 1439 (1990).
3. B. D. Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, F. Mondond, B. Guillaumot and P. Candelier, IEEE Trans. Electron Dev. ED-46, 1518 (1999).
4. S. J. Shen, C. C. H. Hsu and M. S. Liand, Jpn J. Appl. Phys. 37, 4306 (1998).
5. to be published J. Korean Phys. Soc. in Dec. 2001.
6. B. J. Shin, K. H. Park, J. H. Kim and J. B. Choi, J. Korean Phys. Soc. 39, 374 (2001).
7. S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami and K. Yoshikawa, Proc. 28th IEEE IRPS, 132 (1990).
8. C. S. Pan, K. Wu and G. Sery, IEEE Trans. Electron Dev. Lett. 37, 51 (1991).