Analysis and modeling of the data retention characteristics of the stacked-gate flash EEPROM cell with an ONO inter-poly dielectric

Journal of the Korean Physical Society

Volumn 39, Issue 6, 2001, Pages 1100-1102

  Kim, Jang Han ^a   Choi, Jung Bum ^a   Shin, Bong Jo ^a   Choi, Ikguen ^a   Park, Keun Hyung ^a   Yang, Sung Il ^b  

^a Chungbuk National University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035542084     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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