Impedance spectroscopy study of niobium-doped strontium titanate ceramics

Journal of the American Ceramic Society

Volumn 85, Issue 11, 2002, Pages 2745-2752

  Abrantes, Joao C C ^a   Feighery, Alan ^a   Ferreira, António A L ^a   Labrincha, Joao Antonio ^a   Frade, Jorge R ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); INTERFACES (MATERIALS); NIOBIUM; SCANNING ELECTRON MICROSCOPY; STRONTIUM COMPOUNDS; THERMAL EFFECTS;

IMPEDANCE SPECTROSCOPY; INTERGRAIN INTERFACES; STRONTIUM TITANATE CERAMICS;

CERAMIC MATERIALS;

EID: 0036862601     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2002.tb00523.x     Document Type: Article

References (25)

1. C. Tragut, "The Influence of the Surface Transfer Reaction on the Response Characteristics of Resistive Oxygen Sensors," Sens. Actuators B, 7, 742-46 (1992).
2. U. Schonauer, "Response Time of Resistive Thick-Film Oxygen Sensors," Sens. Actuators B, 4, 431-36 (1991).
3. G. Gerblinder and H. Meixner, "Fast Oxygen Sensors Based on Sputtered Strontium Titanate," Sens. Actuators B, 4, 99-102 (1991).
4. 3+δ Materials for Gas Sensors," Sens. Actuators B, 56, 198-205 (1999).
5. 3-Based Boundary Layer Capacitors"; pp. 232-41 in Advances in Ceramics, Vol. 1, Grain Boundary Phenomena in Electronic Ceramics. Edited by L. M. Levinson and D. C. Hill. American Ceramic Society, Columbus, OH, 1981.
6. 3 Boundary Layer Capacitors"; in Advances in Ceramics, Grain Boundary Phenomena in Electronic Ceramics. Edited by L. M. Levinson and D. C. Hill, American Ceramic Society, Columbus, OH, 1981. pp. 272-81.
7. J. H. Jeon and S. J. L. Kang, "Effect of Sintering Atmosphere on Interface Migration of Niobium-Doped Strontium Titanate during Infiltration of Oxide Melt," J. Am. Ceram. Soc., 77, 1688-90 (1994).
8. J. H. Jeon, J. S. Kim, S. J. L. Kang, and M. S. Yang, "Atmosphere Control of Interface Migration and Its Effect on Dielectric Property of CuO-Infiltrated Strontium Titanate," J. Am. Ceram. Soc., 79, 1499-503 (1996).
9. J. H. Jeon, J. H. Je, and S. J. L. Kang, "Control of Interface Migration in Melt Infiltrated Niobium-Doped Strontium Titanate by Solute Species and Atmosphere," J. Am. Ceram. Soc., 81, 624-28 (1998).
10. 3 by Oxygen Partial Pressure Change," J. Am. Ceram. Soc., 81, 3016-18 (1998).
11. M. Vollmann and R. Waser, "Grain Boundary Defect Chemistry of Acceptor Doped Titanates: Space Charge Layer Width," J. Am. Ceram. Soc., 77, 235-43 (1994).
12. M. Vollmann, R. Hagenbeck, and R. Waser, "Grain Boundary Defect Chemistry of Acceptor Doped Titanates: Inversion Layer and Low Field Conduction," J. Am. Ceram. Soc., 80, 2301-14 (1997).
13. 3 Boundaries," J. Electrochem. Soc., 144, 3526-36 (1997).
14. J. C. C. Abrantes, J. A. Labrincha, and J. R. Frade, "Applicability of the Brick Layer Model to Describe the Grain Boundary Properties of Strontium Titanate Ceramics," J. Eur. Ceram. Soc., 20, 1603-609 (2000).
15. 3 Showing Positive Temperature Coefficient of Resistance," J. Appl. Phys., 66, 3850-56 (1989).
16. 3 Ceramics," J. Mater. Sci., 29, 6061-68 (1994).
17. 3 Single Crystals Under Oxidizing Conditions," Ferroelectrics, 224, 323-29 (1999).
18. R. Meyer, R. Waser, J. Helmbold, and G. Borchardt, "Advances in Point Defect Chemistry: Space Charge Controlled Surface Reactions"; presented at Electroceramics VII (Portoroz, Slovenia, Sept. 3-6, 2000).
19. 3 (001)," Appl. Surf. Sci., 117 [8] 400-405 (1997).
20. 3 Interfaces," J. Eur. Ceram. Soc., 19, 687-91 (1999).
21. 3 Ceramics," J. Appl. Phys., 80, 393-400 (1996).
22. R. Werincke, "The Kinetics of Equilibrium Restoration in Barium Titanate Ceramics," Philips Res. Rept., 31, 526-43 (1976).
23. R. Moos and K. H. Härdtl, "Defect Chemistry of Donor-Doped and Undoped Strontium Titanate Ceramics between 1000° and 1400°C," J. Am. Ceram. Soc., 2549-62 (1997).
24. D. W. Johnson, L. E. Cross, and F. A. Hummel, "Dielectric Relaxation in Strontium Titanates Containing Rare-Earth Ions," J. Appl. Phys., 41, 2828-33 (1971).
25. 3: II. Dielectric Properties in the Temperature Range 300-600 K," J. Eur. Ceram. Soc., 18, 1629-35 (1998).