High temperature transport properties at metal/SrTiO3 interfaces

Journal of the European Ceramic Society

Volumn 19, Issue 6-7, 1999, Pages 687-691

  Kawada, Tatsuya ^a   Iizawa, Naofumi ^a   Tomida, Michihisa ^a   Kaimai, Atsushi ^a   Kawamura, Ken Ichi ^a   Nigara, Yutaka ^a   Mizusaki, Junichiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Electrical properties.; Interfaces; SrTiO3

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE PROPERTIES; LASER ABLATION; MATHEMATICAL MODELS; METALS; NEGATIVE TEMPERATURE COEFFICIENT; OXYGEN; SCHOTTKY BARRIER DIODES; STRONTIUM COMPOUNDS; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

SCHOTTKY TYPE NONLINEARITY; STRONTIUM TITANATE;

INTERFACES (MATERIALS);

EID: 0032634949     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0955-2219(98)00297-0     Document Type: Article

References (18)

1. 2(g)/stabilized zirconia interfaces. Part I: Theoretical consideration of reaction model, Solid State Ionics, 1987, 22, 313-322.
2. Riess, I., Conditions for neglecting space charge effects on distributions of point defects and I-V relations, Solid State Ionics 1994, 69, 43-52.
3. Maier, J., Crystalline solid electrolytes and defect chemistry: some novel thermodynamic and kinetic results, Solid State Ionics 1996, 86-88, 55-67.
4. 3 boundaries, J. Electrochem. Soc., 1997, 144, 3526-3536.
5. 2, Appl. Phys. A., 1994, 59, 239-243.
6. Kopp, A., Näfe, H. and Weppner, W., Characterization of the electronic charge carriers in TZP, Solid State Ionics, 1992, 53-56, 853-858.
7. Kobayashi, K., Yamaguchi, S. and Iguchi, Y., Formation of Schottky barrier at metal/mixed conductor interface, extended abstracts of 11th International Conference on Solid State Ionics, Honolulu, 1997, Paper D76, p. 435.
8. Waser, R., Baiatu, T. and Härdtl, K-H., dc electrical degradation of Perovskite-type titanites: I, ceramics, J. Am. Ceram. Soc., 1990, 73, 1645-1653.
9. Waser, R., Baiatu, T. and Härdtl, K-H., dc electrical degradation of Perovskite-type titanites: II, single crystals, J. Am. Ceram. Soc., 1990, 73, 1654-1662.
10. 3 under an oxygen potential gradient, Solid State Ionics 1998, 108, 391-402.
11. Neville, R. C. and Mead, C. A., Surface barrier energies on strontium titanate, J. Appl. Phys. 1972, 43, 4657-4663.
12. 3 contact, J. Appl. Phys., 1991, 69, 1501-1505.
13. 3 (001), Appl. Surf. Sci., 1997, 117/118, 400-405.
14. Moos, R., and Härdtl, K. H., Defect chemistry of donor-doped and undoped strontium titanate ceramics between 1000° and 1400°C, J. Am. Ceram. Soc., 1997, 8, 2549-2562.
15. 3, J. Am. Ceram. Soc., 1981, 64, 556-562.
16. 3, Physica B, 1997, 237-238, 380-382.
17. Sze, S. M., Physics of Semiconductor Devices, 2nd. ed. Wiley, Singapore, 1981 p. 245.
18. 3: bulk behavior and boundary effects, J. Am. Ceram. Soc., 1997, 80, 279-285.