Dual damascene advanced interconnects: New copper seed layer enhancement process metrology using ion chromatography

Microelectronics Journal

Volumn 33, Issue 11, 2002, Pages 945-953

  Lee, Shih Wei ^a   Shi, Frank G ^a   Lopatin, Sergey D ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Copper seed layer; Dual damascene; Ion chromatography; Metrology

Indexed keywords

ASPECT RATIO; CHROMATOGRAPHY; COPPER; ELECTRIC CONDUCTIVITY; ELECTROPLATING; IONS; METALLIZING; PHYSICAL VAPOR DEPOSITION; THIN FILMS;

ION CHROMATOGRAPHY;

INTERCONNECTION NETWORKS;

EID: 0036858853     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00100-3     Document Type: Conference Paper

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