Comparison of permittivity of ion imlanted silicon and silicon bombared with neutrons

Nukleonika

Volumn 44, Issue 2, 1999, Pages 281-284

  Zukowski, P ^a   Partyka, J ^a   Wegierek P ^a   Kozak, M ^a  

^a LUBLIN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001101884     PISSN: 00295922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. Zu̇kowski P., Kantorov S. B., Kiszczak K.: Phys.Stat.Sol. (a), 128, 111, 1991.
2. Żukowski P., Partyka J., Wȩgierek P.: Effect of ion implantation and annealing on the dielectric properties of silicon. Phys. Stat. Sol. (a) 159, 509, 1997.
3. Żukowski P., Kantorov S. B. et.al.: Fiz. Tech. Polupr., 24, 1473 1990.