Synthesis and ellipsometric characterization of insulating low permittivity SiO2 layers by remote-PECVD using radio-frequency glow discharge

Thin Solid Films

Volumn 419, Issue 1-2, 2002, Pages 27-32

  Dultsev, F N ^a   Solowjev, A P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Chemical vapour deposition (CVD); Ellipsometry; Silicon dioxide

Indexed keywords

CHEMICAL REACTORS; ELLIPSOMETRY; FILM GROWTH; MESOPOROUS MATERIALS; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; PRESSURE CONTROL; SILANES; SILICA; TEMPERATURE CONTROL;

FREE-RADICAL BRANCHED CHAIN PROCESSES;

DIELECTRIC FILMS;

EID: 0036850134     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00760-5     Document Type: Article

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