Polarization switching characteristics of Pb(Zr0.5Ti0.5)O3 thin films deposited on vacuum-annealed PtOx/Pt electrode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 6054-6059

  Liu, Chin Lin ^a   Lee, Zhen Yue ^a   Wu, Tai Bor ^a   Lung, Shiang Lan ^a   Liu, Rich ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Ferroelectricity; Low voltage operation; PtOx; PZT; RF sputtering

Indexed keywords

ANNEALING; CAPACITORS; ELECTRODES; FERROELECTRICITY; LEAD COMPOUNDS; MAGNETRON SPUTTERING; MICROSTRUCTURE; POROUS MATERIALS; REDUCTION; TEMPERATURE; VACUUM APPLICATIONS;

IN SITU VACUUM ANNEALING; LOW VOLTAGE OPERATION; POLARIZATION SWITCHING; POROUS STRUCTURE; RADIO FREQUENCY MAGNETRON SPUTTERING;

THIN FILMS;

EID: 0036818469     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6054     Document Type: Article

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